? semiconductor components industries, llc, 2011 july, 2011 ? rev. 0 1 publication order number: 2N2905A/d 2N2905A switching transistor pnp silicon epitaxial features ? mil ? prf ? 19500/290 qualified ? available as jan, jantx, and jantxv ? hermetically sealed commercial product with option for military temperature range screening maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 60 vdc collector ? base voltage v cbo ? 60 vdc emitter ? base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 600 madc total device dissipation @ t a = 25 c derate above 25 c p t 800 5.13 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p t 3.0 20 w mw/ c operating and storage junction temperature range t j , t stg ? 65 to +200 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? ambient r ja 195 c/w thermal resistance, junction ? to ? case r jc 50 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. collector 3 2 base 1 emitter http://onsemi.com to ? 39 case 205ab style 1 device package shipping ordering information jan2N2905A jantx2N2905A to ? 39 bulk jantxv2N2905A
2N2905A http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 1) (i c = ? 10 madc, i b = 0) v (br)ceo ? 60 ? vdc collector ? base cutoff current (v ce = ? 60 vdc) i ces ? ? 1.0 adc collector to base cutoff current (v cb = ? 50 vdc) (v cb = ? 50 vdc, t a = 150 c) (v cb = ? 60 vdc) i cbo ? ? ? ? 0.01 ? 10 ? 10 adc emitter to base cutoff current (v eb = 5.0 vdc) (v eb = 3.5 vdc) i ebo ? ? ? 10 ? 0.050 adc on characteristics dc current gain (i c = ? 0.1 madc, v ce = ? 10 vdc) (i c = ? 1.0 madc, v ce = ? 10 vdc) (i c = ? 10 madc, v ce = ? 10 vdc) (i c = ? 150 madc, v ce = ? 10 vdc) (note 1) (i c = ? 500 madc, v ce = ? 10 vdc) (note 1) (i c = ? 1.0 madc, v ce = ? 10 vdc, t a = ? 55 c) h fe 75 100 100 100 50 50 ? 450 ? 300 ? ? ? collector ? emitter saturation voltage (note 1) (i c = ? 150 madc, i b = ? 15 madc) (i c = ? 500 madc, i b = ? 50 madc) v ce(sat) ? ? ? 0.4 ? 1.6 vdc base ? emitter saturation voltage (note 1) (i c = ? 150 madc, i b = ? 15 madc) (i c = ? 500 madc, i b = ? 50 madc) v be(sat) ? ? ? 1.3 ? 2.6 vdc small ? signal characteristics small signal short ? circuit forward current transfer ratio (i c = ? 50 madc, v ce = ? 20 vdc, f = 100 mhz) |h fe | 2.0 ? ? small signal short ? circuit forward current transfer ratio (i c = ? 1.0 madc, v ce = ? 10 vdc, f = 1 khz) h fe 100 ? ? output capacitance (v cb = ? 10 vdc, i e = 0, 100 khz f 1.0 mhz) c obo ? 8.0 pf input capacitance (v eb = ? 2.0 vdc, i c = 0, 100 khz f 1.0 mhz) c ibo ? 30 pf switching characteristics turn ? on time see mil ? prf ? 19500/290 t on ? 45 ns turn ? off time see mil ? prf ? 19500/290 t off ? 300 ns 1. pulse test: see section 4 of mil ? std ? 750.
2N2905A http://onsemi.com 3 package dimensions to ? 39 3 ? lead case 205ab ? 01 issue o style 1: pin 1. emitter 2. base 3. collector seating plane r f b c k l p d 3x m h j s b 0.007 (0.18mm) c m a n dim min max min max inches millimeters a 0.350 0.370 8.89 9.40 b 0.315 0.335 8.00 8.51 c 0.240 0.260 6.10 6.60 d 0.016 0.019 0.41 0.48 e 0.009 0.125 0.23 3.18 f 0.016 0.019 0.41 0.48 n 0.200 bsc 5.08 bsc h 0.028 0.034 0.71 0.86 j 0.029 0.040 0.73 1.02 k 0.500 0.580 12.70 14.73 l 0.250 --- 6.35 --- m 45 bsc 45 bsc r 0.054 bsc 1.37 bsc p --- 0.050 --- 1.27 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. dimension j measured from diameter a to edge. 4. lead true position to be determined at the guage plane defined by dimension r. 5. dimension f applies between dimension p and l. 6. dimension d applies between dimension l and k. 7. body contour optional within zone defined by dimen- sions a, b, and t. 8. dimension b shall not vary more than 0.010 in zone p. t --- 0.030 --- 0.76 u 0.100 --- 2.54 --- a b a detail x u note 5 notes 4 & 6 c u e 2 3 1 detail x note 7 t lead identification detail on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 2N2905A/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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